Title
Floating stacking fault during homoepitaxial growth of Ag(111) Floating stacking fault during homoepitaxial growth of Ag(111)
Author
Faculty/Department
Faculty of Sciences. Chemistry
Publication type
article
Publication
New York, N.Y. ,
Subject
Physics
Source (journal)
Physical review letters. - New York, N.Y.
Volume/pages
81(1998) :2 , p. 381-384
ISSN
0031-9007
ISI
000074750400035
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
We have investigated the influence of Sb on the formation of stacking faults during Ag(111) growth using x-ray scattering. In equilibrium, a predeposition of 1/3 monolayer Sb results in a (root 3 X root 3)R 30 degrees reconstruction in which the top layer is wrongly stacked. Upon continued Ag growth at 100 degrees C, the Sb segregates and the Ag atoms return to the correct stacking, while the new Ag atoms in the top layer again have the wrong stacking. This thus effectively leads to a floating stacking fault. Because of kinetic limitations, the same effect occurs for lower Sb coverages.
Full text (open access)
https://repository.uantwerpen.be/docman/irua/d9336d/7949.pdf
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