Publication
Title
Floating stacking fault during homoepitaxial growth of Ag(111)
Author
Abstract
We have investigated the influence of Sb on the formation of stacking faults during Ag(111) growth using x-ray scattering. In equilibrium, a predeposition of 1/3 monolayer Sb results in a (root 3 X root 3)R 30 degrees reconstruction in which the top layer is wrongly stacked. Upon continued Ag growth at 100 degrees C, the Sb segregates and the Ag atoms return to the correct stacking, while the new Ag atoms in the top layer again have the wrong stacking. This thus effectively leads to a floating stacking fault. Because of kinetic limitations, the same effect occurs for lower Sb coverages.
Language
English
Source (journal)
Physical review letters. - New York, N.Y.
Publication
New York, N.Y. : 1998
ISSN
0031-9007
Volume/pages
81:2(1998), p. 381-384
ISI
000074750400035
Full text (Publisher's DOI)
Full text (open access)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 29.02.2012
Last edited 18.08.2017
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