Title The study of ripple formation and degradation of depth resolution in GaAs and $Al_{x}Ga_{1-x}As$ structuresThe study of ripple formation and degradation of depth resolution in GaAs and $Al_{x}Ga_{1-x}As$ structures Author Elst, K. Adriaens, A. Adams, F. Faculty/Department Faculty of Sciences. Chemistry Research group Department of Chemistry - other Department of Chemistry Publication type article Publication 1997Amsterdam, 1997 Subject Physics Chemistry Source (journal) International journal of mass spectrometry. - Amsterdam International journal of mass spectrometry and ion processes. - Amsterdam Volume/pages 171(1997):1-3, p. 191-202 ISSN 1387-3806 ISI 000071872000019 Carrier E Target language English (eng) Full text (Publishers DOI) Affiliation University of Antwerp Abstract The present work investigates the characteristics of ripple formation in AlxGa1-xAs samples under oxygen irradiation. The wavelength and the amplitude of the ripples have been determined under different conditions and are examined within the scope of two existing theoretical models: the model of Bradley and Harper [1] and the local incorporation model [12]. It is shown that oxygen bombardment of AlxGa1-xAs (with 0 less than or equal to x less than or equal to 0.56) structures with an impact energy of 8 keV at 37 degrees always produces ripples. Both the wavelength as well as the growth rate of the ripples are affected by the stoichiometric composition of the sample analyzed, the temperature, and the oxygen pressure near the sample. The work shows that the local incorporation mechanism contributes to the ripple growth and explains correctly the increase in ripple amplitude when introducing oxygen gas near the sample. Moreover, it also accounts for the material dependence and the strong reduction in ripple growth rate at the highest pressures. Neither of the two models can explain the dependence of the ripple formation as a function of the temperature. (C) 1997 Elsevier Science B.V. E-info https://repository.uantwerpen.be/docman/iruaauth/41c18b/2052444.pdf http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000071872000019&DestLinkType=RelatedRecords&DestApp=ALL_WOS&UsrCustomerID=ef845e08c439e550330acc77c7d2d848 http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000071872000019&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=ef845e08c439e550330acc77c7d2d848 http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000071872000019&DestLinkType=CitingArticles&DestApp=ALL_WOS&UsrCustomerID=ef845e08c439e550330acc77c7d2d848 Handle