Title
The study of ripple formation and degradation of depth resolution in GaAs and <tex>$Al_{x}Ga_{1-x}As$</tex> structures The study of ripple formation and degradation of depth resolution in GaAs and <tex>$Al_{x}Ga_{1-x}As$</tex> structures
Author
Faculty/Department
Faculty of Sciences. Chemistry
Publication type
article
Publication
Amsterdam ,
Subject
Physics
Chemistry
Source (journal)
International journal of mass spectrometry. - Amsterdam
International journal of mass spectrometry and ion processes. - Amsterdam
Volume/pages
171(1997) :1-3 , p. 191-202
ISSN
1387-3806
ISI
000071872000019
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
The present work investigates the characteristics of ripple formation in AlxGa1-xAs samples under oxygen irradiation. The wavelength and the amplitude of the ripples have been determined under different conditions and are examined within the scope of two existing theoretical models: the model of Bradley and Harper [1] and the local incorporation model [12]. It is shown that oxygen bombardment of AlxGa1-xAs (with 0 less than or equal to x less than or equal to 0.56) structures with an impact energy of 8 keV at 37 degrees always produces ripples. Both the wavelength as well as the growth rate of the ripples are affected by the stoichiometric composition of the sample analyzed, the temperature, and the oxygen pressure near the sample. The work shows that the local incorporation mechanism contributes to the ripple growth and explains correctly the increase in ripple amplitude when introducing oxygen gas near the sample. Moreover, it also accounts for the material dependence and the strong reduction in ripple growth rate at the highest pressures. Neither of the two models can explain the dependence of the ripple formation as a function of the temperature. (C) 1997 Elsevier Science B.V.
E-info
https://repository.uantwerpen.be/docman/iruaauth/41c18b/2052444.pdf
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000071872000019&DestLinkType=RelatedRecords&DestApp=ALL_WOS&UsrCustomerID=ef845e08c439e550330acc77c7d2d848
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000071872000019&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=ef845e08c439e550330acc77c7d2d848
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000071872000019&DestLinkType=CitingArticles&DestApp=ALL_WOS&UsrCustomerID=ef845e08c439e550330acc77c7d2d848
Handle