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Title
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Structural defects and epitaxial rotation of and (111) films on GeS(001)
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Author
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Abstract
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| A transmission electron microscopy study of epitaxial C-60 and C-70 films grown on a GeS (001) surface is presented. The relationship between the orientation of the substrate and the films and structural defects in the films, such as grain boundaries, unknown in bulk C-60 and C-70 crystals, are studied. Small misalignments of the overlayers with respect to the orientation of the substrate, so-called epitaxial rotations, exist mainly in C-70 films, but also sporadically in the C-60 overlayers. A simple symmetry model, previously used to predict the rotation of hexagonal overlayers on hexagonal substrates, is numerically tested and applied to the present situation. Some qualitative conclusions concerning the substrate-film interaction are deduced. (C) 1996 American Institute of Physics. |
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Language
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English
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Source (journal)
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Journal of applied physics / American Institute of Physics. - New York, N.Y., 1937, currens
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Publication
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New York, N.Y.
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American Institute of Physics
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1996
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ISSN
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0021-8979
[print]
1089-7550
[online]
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DOI
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10.1063/1.363241
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Volume/pages
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80
:6
(1996)
, p. 3310-3318
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ISI
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A1996VG68100027
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Full text (Publisher's DOI)
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Full text (publisher's version - intranet only)
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