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Title
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Electron-mobility in 2 coupled delta-layers
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Author
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Abstract
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| The low-temperature transport properties are studied for electrons confined in delta-doped semiconductor structures with two sheets in parallel. The subband quantum mobility and transport mobility are calculated numerically for the Si delta-doped GaAs systems. The effect of coupling of the two delta layers on the electron transport is investigated. Our calculations are in good agreement with experimental results. |
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Language
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English
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Source (journal)
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Physical review : B : condensed matter. - New York, N.Y., 1978 - 1997
Physical review : B : condensed matter and materials physics. - Lancaster, Pa, 1998 - 2015
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Publication
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New York, N.Y.
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1995
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ISSN
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0163-1829
[print]
1095-3795
[online]
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DOI
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10.1103/PHYSREVB.52.11273
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Volume/pages
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52
:15
(1995)
, p. 11273-11276
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ISI
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A1995TA85200092
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Full text (Publisher's DOI)
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