Publication
Title
Electron-mobility in 2 coupled delta-layers
Author
HAI
Abstract
The low-temperature transport properties are studied for electrons confined in delta-doped semiconductor structures with two sheets in parallel. The subband quantum mobility and transport mobility are calculated numerically for the Si delta-doped GaAs systems. The effect of coupling of the two delta layers on the electron transport is investigated. Our calculations are in good agreement with experimental results.
Language
English
Source (journal)
Physical review : B : condensed matter and materials physics. - Lancaster, Pa, 1998 - 2015
Publication
Lancaster, Pa : 1995
ISSN
1098-0121 [print]
1550-235X [online]
Volume/pages
52:15(1995), p. 11273-11276
ISI
A1995TA85200092
Full text (Publisher's DOI)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
External links
Web of Science
Record
Identification
Creation 29.02.2012
Last edited 14.06.2017