Title
Warm-electron transport in a 2-dimensional semiconductor system
Author
Publication type
article
Publication
London ,
Subject
Physics
Engineering sciences. Technology
Source (journal)
Semiconductor science and technology. - London
Volume/pages
7() :10 , p. 1251-1256
ISSN
0268-1242
ISI
A1992JT73000006
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Abstract
Warm-electron transport is studied for a two-dimensional electron gas coupled to LO phonons. We found that the mobility can be expanded as mu(F)/mu0 = (1 + gamma Absolute value of F + betaF2) with F the electric field. The warm-electron transport coefficients, gamma and beta, are calculated within: (1) the diffusion-to-streaming transition model, (2) the Monte Carlo simulation method and (3) the momentum-balance equation. For a non-degenerate electron gas we found gamma > 0 and beta < 0.
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