Publication
Title
Sputtering of Si(001) and SiC(001) by grazing ion bombardment
Author
Abstract
The peculiarities of sputtering processes at 0.5-5 keV Ne grazing ion bombardment of Si(001) and SiC(001) surfaces and their possible application for the surface modification have been studied by computer simulation. Sputtering yields in the primary knock-on recoil atoms regime versus the initial energy of incident ions (E(0) = 0.5-5 keV) and angle of incidence (psi = 0-30 degrees) counted from a target surface have been calculated. Comparative studies of layer-by-layer sputtering for Si(001) and SiC(001) surfaces versus the initial energy of incident ions as well as an effective sputtering and sputtering threshold are discussed.
Language
English
Source (book)
24th Summer School and International Symposium on Physics of Ionized Gases, August 25-29, 2008, Novi Sad, Serbia
Publication
2008
ISBN
978-86-80019-27-7
Volume/pages
84(2008), p. 209-213
ISI
000269314500054
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 01.03.2012
Last edited 08.06.2017
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