Title
Sputtering of Si(001) and SiC(001) by grazing ion bombardment Sputtering of Si(001) and SiC(001) by grazing ion bombardment
Author
Faculty/Department
Faculty of Sciences. Chemistry
Publication type
conferenceObject
Publication
[*]
Subject
Physics
Source (book)
24th Summer School and International Symposium on Physics of Ionized Gases, August 25-29, 2008, Novi Sad, Serbia
ISBN
978-86-80019-27-7
ISI
000269314500054
Carrier
E
Target language
English (eng)
Affiliation
University of Antwerp
Abstract
The peculiarities of sputtering processes at 0.5-5 keV Ne grazing ion bombardment of Si(001) and SiC(001) surfaces and their possible application for the surface modification have been studied by computer simulation. Sputtering yields in the primary knock-on recoil atoms regime versus the initial energy of incident ions (E(0) = 0.5-5 keV) and angle of incidence (psi = 0-30 degrees) counted from a target surface have been calculated. Comparative studies of layer-by-layer sputtering for Si(001) and SiC(001) surfaces versus the initial energy of incident ions as well as an effective sputtering and sputtering threshold are discussed.
E-info
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000269314500054&DestLinkType=RelatedRecords&DestApp=ALL_WOS&UsrCustomerID=ef845e08c439e550330acc77c7d2d848
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000269314500054&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=ef845e08c439e550330acc77c7d2d848
Handle