Sputtering of Si(001) and SiC(001) by grazing ion bombardmentSputtering of Si(001) and SiC(001) by grazing ion bombardment
Faculty of Sciences. Chemistry
Molecular Plant Physiology and Biotechnology
Plasma, laser ablation and surface modeling - Antwerp (PLASMANT)
24th Summer School and International Symposium on Physics of Ionized Gases, August 25-29, 2008, Novi Sad, Serbia
University of Antwerp
The peculiarities of sputtering processes at 0.5-5 keV Ne grazing ion bombardment of Si(001) and SiC(001) surfaces and their possible application for the surface modification have been studied by computer simulation. Sputtering yields in the primary knock-on recoil atoms regime versus the initial energy of incident ions (E(0) = 0.5-5 keV) and angle of incidence (psi = 0-30 degrees) counted from a target surface have been calculated. Comparative studies of layer-by-layer sputtering for Si(001) and SiC(001) surfaces versus the initial energy of incident ions as well as an effective sputtering and sputtering threshold are discussed.