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Title
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HREM investigation of a Fe/GaN/Fe tunnel junction
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Author
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Abstract
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| The structure of Fe/GaN/Fe ferromagnetic electrodes is studied by high resolution transmission electron microscopy. The layers grow epitaxially on the GaAs substrate with the top Fe layer 90degrees rotated compared to the bottom one. The interfaces are quite rough. There is an indication of the possible occurrence of Fe3GaAs formation on the GaAs interface. |
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Language
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English
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Source (journal)
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Institute of physics conference series. - Bristol, 1985, currens
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Source (book)
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Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, Univ of Oxford, Oxford, England
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Publication
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Bristol
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IOP Publishing
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2001
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ISBN
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0-7503-0818-4
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Volume/pages
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169
(2001)
, p. 53-56
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ISI
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000176465200012
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