Publication
Title
HREM investigation of a Fe/GaN/Fe tunnel junction
Author
Abstract
The structure of Fe/GaN/Fe ferromagnetic electrodes is studied by high resolution transmission electron microscopy. The layers grow epitaxially on the GaAs substrate with the top Fe layer 90degrees rotated compared to the bottom one. The interfaces are quite rough. There is an indication of the possible occurrence of Fe3GaAs formation on the GaAs interface.
Language
English
Source (journal)
CONFERENCE SERIES- INSTITUTE OF PHYSICS
Source (book)
Royal-Microscopical-Society Conference on Microscopy of Semiconducting, Materials, MAR 25-29, 2001, Univ of Oxford, Oxford, England
Publication
Bristol : IOP Publishing, 2001
ISBN
0-7503-0818-4
Volume/pages
169(2001), p. 53-56
ISI
000176465200012
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 01.03.2012
Last edited 20.07.2017
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