Title
Stress analysis with convergent beam electron diffraction around NMOS transistors Stress analysis with convergent beam electron diffraction around NMOS transistors
Author
Faculty/Department
Faculty of Sciences. Physics
Faculty of Sciences. Mathematics and Computer Science
Publication type
conferenceObject
Publication
Princeton, N.J. :Princeton University Press, [*]
Subject
Chemistry
Source (book)
5th Multinational Congress on Electron Microscopy, Sept. 20-25, 2001, Lecc, Italy
ISBN
1-58949-003-7
ISI
000183071700141
Carrier
E
Target language
English (eng)
Affiliation
University of Antwerp
E-info
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Handle