|
Title
|
|
|
|
Stress analysis with convergent beam electron diffraction around NMOS transistors
| |
|
Author
|
|
|
|
| |
|
Language
|
|
|
|
English
| |
|
Source (book)
|
|
|
|
5th Multinational Congress on Electron Microscopy, Sept. 20-25, 2001, Lecc, Italy
| |
|
Publication
|
|
|
|
Princeton, N.J.
:
Princeton University Press
,
2001
| |
|
ISBN
|
|
|
|
1-58949-003-7
| |
|
Volume/pages
|
|
|
|
(2001)
, p. 359-360
| |
|
ISI
|
|
|
|
000183071700141
| |
|