Title
Accurate infrared absorption measurement of interstitial and precipitated oxygen in <tex>$p^{+}$</tex> silicon wafers Accurate infrared absorption measurement of interstitial and precipitated oxygen in <tex>$p^{+}$</tex> silicon wafers
Author
Faculty/Department
Faculty of Sciences. Physics
Publication type
article
Publication
Amsterdam ,
Subject
Physics
Engineering sciences. Technology
Source (journal)
Microelectronic engineering. - Amsterdam
Volume/pages
45(1999) :2-3 , p. 277-282
ISSN
0167-9317
ISI
000081748600023
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
A novel infrared absorption method has been developed to measure [he interstitial oxygen concentration in highly doped silicon. Thin samples of the order of 10-30 mu m are prepared in an essentially stress-free state without changing the state of the crystal. The oxygen concentration is then determined by measuring the height of the 1136-cm(-1) absorption peak due to interstitial oxygen at 5.5 K. The obtained results on as-grown samples are compared with those from gas fusion analysis. The precipitated oxygen concentration in annealed samples is also determined with the new method. It will be shown that the interstitial oxygen concentration in highly doped silicon can be determined with high accuracy and down to concentrations of 10(17) cm(-3). (C) 1999 Elsevier Science B.V. All rights reserved.
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