Title
DX center breakdown in high electric fields DX center breakdown in high electric fields
Author
Faculty/Department
Faculty of Sciences. Physics
Publication type
article
Publication
Zurich :Transtec Publications ,
Subject
Physics
Source (journal)
Materials science forum. - Lausanne, 1984, currens
Source (book)
10th International Symposium on Ultrafast Phenomena in Semiconductors, (10-UFPS), August 31-eptember 02, 1998, Vilnius, Lithuania
Volume/pages
297-2(1999) , p. 25-28
ISBN
0-87849-824-9
ISI
000080081600005
Carrier
E
Target language
English (eng)
Affiliation
University of Antwerp
Abstract
Experimental results on dynamical breakdown of metastable centers in Al0.3Ga0.7As caused by fast ramped electric fields are presented. The electrical breakdown was found to begin abruptly above threshold field F-th=(1.71+/-0.34)x10(5) V/cm. Persistent conductivity after the breakdown was observed at low temperatures. The breakdown is explained by ionization of DX centers by hot carriers.
E-info
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000080081600005&DestLinkType=RelatedRecords&DestApp=ALL_WOS&UsrCustomerID=ef845e08c439e550330acc77c7d2d848
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000080081600005&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=ef845e08c439e550330acc77c7d2d848
Handle