DX center breakdown in high electric fields
Faculty of Sciences. Physics
Zurich :Transtec Publications
Materials science forum. - Lausanne, 1984, currens
10th International Symposium on Ultrafast Phenomena in Semiconductors, (10-UFPS), August 31-eptember 02, 1998, Vilnius, Lithuania
, p. 25-28
University of Antwerp
Experimental results on dynamical breakdown of metastable centers in Al0.3Ga0.7As caused by fast ramped electric fields are presented. The electrical breakdown was found to begin abruptly above threshold field F-th=(1.71+/-0.34)x10(5) V/cm. Persistent conductivity after the breakdown was observed at low temperatures. The breakdown is explained by ionization of DX centers by hot carriers.