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Title
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DX center breakdown in high electric fields
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Author
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Abstract
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| Experimental results on dynamical breakdown of metastable centers in Al0.3Ga0.7As caused by fast ramped electric fields are presented. The electrical breakdown was found to begin abruptly above threshold field F-th=(1.71+/-0.34)x10(5) V/cm. Persistent conductivity after the breakdown was observed at low temperatures. The breakdown is explained by ionization of DX centers by hot carriers. |
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Language
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English
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Source (journal)
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Materials science forum. - Lausanne, 1984, currens
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Source (book)
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10th International Symposium on Ultrafast Phenomena in Semiconductors, (10-UFPS), August 31-eptember 02, 1998, Vilnius, Lithuania
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Publication
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Zurich
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Transtec Publications
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1999
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ISBN
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0-87849-824-9
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DOI
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10.4028/WWW.SCIENTIFIC.NET/MSF.297-298.25
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Volume/pages
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297-2
(1999)
, p. 25-28
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ISI
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000080081600005
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Full text (Publisher's DOI)
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