Publication
Title
DX center breakdown in high electric fields
Author
Abstract
Experimental results on dynamical breakdown of metastable centers in Al0.3Ga0.7As caused by fast ramped electric fields are presented. The electrical breakdown was found to begin abruptly above threshold field F-th=(1.71+/-0.34)x10(5) V/cm. Persistent conductivity after the breakdown was observed at low temperatures. The breakdown is explained by ionization of DX centers by hot carriers.
Language
English
Source (journal)
Materials science forum. - Lausanne, 1984, currens
Source (book)
10th International Symposium on Ultrafast Phenomena in Semiconductors, (10-UFPS), August 31-eptember 02, 1998, Vilnius, Lithuania
Publication
Zurich : Transtec Publications, 1999
ISBN
0-87849-824-9
Volume/pages
297-2(1999), p. 25-28
ISI
000080081600005
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 01.03.2012
Last edited 06.05.2017
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