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Title
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New approaches for formation of ultra-thin PtSi layers for infrared applications
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Author
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Abstract
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| In this work we describe the formation of ultra-thin PtSi layers using sputtering for metal deposition and RTP for the silicidation. The problem associated with the controllability of deposition of ultra-thin metal layers can be circumvented by depositing a thick Pt layer followed by a 2-step RTP process with a selective etch step in between. Continuous and uniform 3 nm thick PtSi layers are formed with this technique. Moreover, in another approach similar to the previous one, but in which the first RTP step is omitted, a much smoother PtSi layer is formed. The importance of the interfacial Pt/Si layer formed during metal deposition is described. These processes are totally compatible with CMOS technologies, as shown below. |
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Language
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English
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Source (journal)
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Materials Research Society symposium proceedings. - Wuhan
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Source (book)
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Symposium on Rapid Thermal and Integrated Processing at the MRS Spring, Meeting, APR 13-15, 1998, SAN FRANCISCO, CA
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Publication
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Warrendale
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Materials research society
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1998
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ISBN
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1-55899-431-9
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DOI
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10.1557/PROC-525-307
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Volume/pages
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525
, p. 307-312
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ISI
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000076553400039
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Full text (Publisher's DOI)
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