Publication
Title
New approaches for formation of ultra-thin PtSi layers for infrared applications
Author
Abstract
In this work we describe the formation of ultra-thin PtSi layers using sputtering for metal deposition and RTP for the silicidation. The problem associated with the controllability of deposition of ultra-thin metal layers can be circumvented by depositing a thick Pt layer followed by a 2-step RTP process with a selective etch step in between. Continuous and uniform 3 nm thick PtSi layers are formed with this technique. Moreover, in another approach similar to the previous one, but in which the first RTP step is omitted, a much smoother PtSi layer is formed. The importance of the interfacial Pt/Si layer formed during metal deposition is described. These processes are totally compatible with CMOS technologies, as shown below.
Language
English
Source (journal)
Materials Research Society symposium proceedings. - Wuhan
Source (book)
Symposium on Rapid Thermal and Integrated Processing at the MRS Spring, Meeting, APR 13-15, 1998, SAN FRANCISCO, CA
Publication
Warrendale : Materials research society, 1998
ISBN
1-55899-431-9
Volume/pages
525, p. 307-312
ISI
000076553400039
Full text (Publisher's DOI)
UAntwerpen
Publication type
Subject
External links
Web of Science
Record
Identification
Creation 01.03.2012
Last edited 05.11.2017