New approaches for formation of ultra-thin PtSi layers for infrared applicationsNew approaches for formation of ultra-thin PtSi layers for infrared applications
1998Warrendale :Materials research society, 1998
Materials Research Society symposium proceedings. - Wuhan
Symposium on Rapid Thermal and Integrated Processing at the MRS Spring, Meeting, APR 13-15, 1998, SAN FRANCISCO, CA
525(), p. 307-312
In this work we describe the formation of ultra-thin PtSi layers using sputtering for metal deposition and RTP for the silicidation. The problem associated with the controllability of deposition of ultra-thin metal layers can be circumvented by depositing a thick Pt layer followed by a 2-step RTP process with a selective etch step in between. Continuous and uniform 3 nm thick PtSi layers are formed with this technique. Moreover, in another approach similar to the previous one, but in which the first RTP step is omitted, a much smoother PtSi layer is formed. The importance of the interfacial Pt/Si layer formed during metal deposition is described. These processes are totally compatible with CMOS technologies, as shown below.