InP based heterostructure for medium power applicationsInP based heterostructure for medium power applications
1997New york :Ieee, 1997
Engineering sciences. Technology
EDMO - 1997 WORKSHOP ON HIGH PERFORMANCE ELECTRON DEVICES FOR MICROWAVE
AND OPTOELECTRONIC APPLICATIONS
1997 Workshop on High Performance Electron Devices for Microwave and, Optoelectronic Applications (EDMO), NOV 24-25, 1997, KINGS COLL LONDON, LONDON, ENGLAND
In this paper a double doped InP based HEMT layer structure designed for power applications is presented. An electron density n(e) = 5.1.10(12)cm(-2) and a mobility mu = 8.4.10(3) cm(2)/Vs at roomtemperature result in a maximum channel current density of 1000 mA/mm. The output conductance G(ds) is limited to 27 mS/mm with a maximum transconductance G(m) of 713 mS/mm for 0.2 mu m gate length. The cut-off frequency f(T) is 99 GHz and the maximum oscillation frequency f(MAX) is 218 GHz. Power measurements show a very low second and third harmonic component of -33 and -26 dBc which can be attributed to the G(m) staying constant within 10% for a gate voltage swing of 0.9 Volt.