Title
InP based heterostructure for medium power applicationsInP based heterostructure for medium power applications
Author
Publication type
conferenceObject
Publication
New york :Ieee,
Subject
Physics
Engineering sciences. Technology
Source (journal)
EDMO - 1997 WORKSHOP ON HIGH PERFORMANCE ELECTRON DEVICES FOR MICROWAVE
AND OPTOELECTRONIC APPLICATIONS
Source (book)
1997 Workshop on High Performance Electron Devices for Microwave and, Optoelectronic Applications (EDMO), NOV 24-25, 1997, KINGS COLL LONDON, LONDON, ENGLAND
Volume/pages
p. 125-128
ISBN
0-7803-4135-X
ISI
000073944300023
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Abstract
In this paper a double doped InP based HEMT layer structure designed for power applications is presented. An electron density n(e) = 5.1.10(12)cm(-2) and a mobility mu = 8.4.10(3) cm(2)/Vs at roomtemperature result in a maximum channel current density of 1000 mA/mm. The output conductance G(ds) is limited to 27 mS/mm with a maximum transconductance G(m) of 713 mS/mm for 0.2 mu m gate length. The cut-off frequency f(T) is 99 GHz and the maximum oscillation frequency f(MAX) is 218 GHz. Power measurements show a very low second and third harmonic component of -33 and -26 dBc which can be attributed to the G(m) staying constant within 10% for a gate voltage swing of 0.9 Volt.
E-info
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