Publication
Title
Electron microscopy and Rutherford backscattering spectrometry characterisation of 6H SiC samples implanted with
Author
Abstract
6H SiC single crystals were implanted al room temperature with 1 MeV He+ up to a fluence of 2 x 10(17) at./cm(2) RBS-channeling analysis with a 2 MeV He+ beam indicated the formation of extended defects or the generation of point defects at a constant concentration over a depth of about 1 mu m. Electron microscopy characterisation revealed the presence of two amorphous buried layers at depths of about 1,75 and 4.8 mu m. They an due to the implantation and to the analysing RES beam, respectively, No extended planar or linear faults were found in the region between the surface and the first amorphous layer. However, at the surface, a 50 nm thick amorphous layer was observed in which crystalline inclusions were embedded. Electron diffraction and HREM data of the inclusions were typical for diamond, These inclusions were even found in the crystalline SiC material below this layer, however at a reduced density.
Language
English
Source (journal)
Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms. - Amsterdam
Source (book)
Symposium 1 on New Trends in Ion Beam Processing of Materials, at the, E-MRS 96 Spring Meeting, June 04-07, 1996, Strasbourg, France
Publication
Amsterdam : Elsevier, 1996
ISSN
0168-583X
Volume/pages
120:1-4(1996), p. 186-189
ISI
A1996VZ24500040
Full text (Publisher's DOI)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
External links
Web of Science
Record
Identification
Creation 01.03.2012
Last edited 19.08.2017