Title
Electron microscopy and Rutherford backscattering spectrometry characterisation of 6H SiC samples implanted with <tex>$He^{+}$</tex> Electron microscopy and Rutherford backscattering spectrometry characterisation of 6H SiC samples implanted with <tex>$He^{+}$</tex>
Author
Faculty/Department
Faculty of Sciences. Physics
Publication type
article
Publication
Amsterdam :Elsevier ,
Subject
Physics
Engineering sciences. Technology
Source (journal)
Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms. - Amsterdam
Source (book)
Symposium 1 on New Trends in Ion Beam Processing of Materials, at the, E-MRS 96 Spring Meeting, June 04-07, 1996, Strasbourg, France
Volume/pages
120(1996) :1-4 , p. 186-189
ISSN
0168-583X
ISI
A1996VZ24500040
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Abstract
6H SiC single crystals were implanted al room temperature with 1 MeV He+ up to a fluence of 2 x 10(17) at./cm(2) RBS-channeling analysis with a 2 MeV He+ beam indicated the formation of extended defects or the generation of point defects at a constant concentration over a depth of about 1 mu m. Electron microscopy characterisation revealed the presence of two amorphous buried layers at depths of about 1,75 and 4.8 mu m. They an due to the implantation and to the analysing RES beam, respectively, No extended planar or linear faults were found in the region between the surface and the first amorphous layer. However, at the surface, a 50 nm thick amorphous layer was observed in which crystalline inclusions were embedded. Electron diffraction and HREM data of the inclusions were typical for diamond, These inclusions were even found in the crystalline SiC material below this layer, however at a reduced density.
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