Title
Ion beam synthesis of <tex>$\beta$</tex>-SiC at 950 degrees C and structural characterization
Author
Faculty/Department
Faculty of Sciences. Physics
Publication type
article
Publication
Amsterdam :Elsevier science bv ,
Subject
Physics
Engineering sciences. Technology
Source (journal)
Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms. - Amsterdam
Source (book)
Symposium J on Correlated Effects in Atomic and Cluster Ion Bombardment and Implantation/Symposium C on Pushing the Limits of Ion Beam, Processing - From Engineering to Atomic Scale Issues, at the E-MRS 95, Spring Meeting, May 22-26, 1995, Strasbourg, France
Volume/pages
112(1996) :1-4 , p. 325-329
ISSN
0168-583X
ISI
A1996UW20100069
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
The structure of beta-SiC formed by carbon implantation into Si at high temperatures (850-950 degrees C) at doses ranging between 0.2 X 10(18) to 1 X 10(18) cm(-2) at 200 keV, was studied by combined cross section and high resolution transmission electron microscopy (XTEM and HRTEM). Implantation was performed on (001) and (111) Si wafers. In both cases a buried beta-SiC layer was formed having the same orientation as the Si matrix.
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Handle