Publication
Title
Ion beam synthesis of -SiC at 950 degrees C and structural characterization
Author
Abstract
The structure of beta-SiC formed by carbon implantation into Si at high temperatures (850-950 degrees C) at doses ranging between 0.2 X 10(18) to 1 X 10(18) cm(-2) at 200 keV, was studied by combined cross section and high resolution transmission electron microscopy (XTEM and HRTEM). Implantation was performed on (001) and (111) Si wafers. In both cases a buried beta-SiC layer was formed having the same orientation as the Si matrix.
Language
English
Source (journal)
Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms. - Amsterdam
Source (book)
Symposium J on Correlated Effects in Atomic and Cluster Ion Bombardment and Implantation/Symposium C on Pushing the Limits of Ion Beam, Processing - From Engineering to Atomic Scale Issues, at the E-MRS 95, Spring Meeting, May 22-26, 1995, Strasbourg, France
Publication
Amsterdam : Elsevier science bv, 1996
ISSN
0168-583X
Volume/pages
112:1-4(1996), p. 325-329
ISI
A1996UW20100069
Full text (Publisher's DOI)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 01.03.2012
Last edited 28.07.2017
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