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Title
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Ion beam synthesis of -SiC at 950 degrees C and structural characterization
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Author
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Abstract
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| The structure of beta-SiC formed by carbon implantation into Si at high temperatures (850-950 degrees C) at doses ranging between 0.2 X 10(18) to 1 X 10(18) cm(-2) at 200 keV, was studied by combined cross section and high resolution transmission electron microscopy (XTEM and HRTEM). Implantation was performed on (001) and (111) Si wafers. In both cases a buried beta-SiC layer was formed having the same orientation as the Si matrix. |
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Language
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English
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Source (journal)
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Nuclear instruments and methods in physics research: B: beam interactions with materials and atoms. - Amsterdam
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Source (book)
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Symposium J on Correlated Effects in Atomic and Cluster Ion Bombardment and Implantation/Symposium C on Pushing the Limits of Ion Beam, Processing - From Engineering to Atomic Scale Issues, at the E-MRS 95, Spring Meeting, May 22-26, 1995, Strasbourg, France
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Publication
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Amsterdam
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Elsevier science bv
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1996
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ISSN
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0168-583X
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DOI
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10.1016/0168-583X(95)01236-2
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Volume/pages
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112
:1-4
(1996)
, p. 325-329
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ISI
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A1996UW20100069
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Full text (Publisher's DOI)
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