Title
Resonant tunnelling through **D**- states Resonant tunnelling through **D**- states
Author
Faculty/Department
Faculty of Sciences. Physics
Publication type
article
Publication
Amsterdam :Elsevier ,
Subject
Physics
Chemistry
Source (journal)
Surface science: a journal devoted to the physics and chemistry of interfaces. - Amsterdam
Source (book)
11th International Conference on the Electronic Properties of 2-Dimensional Systems (EP2DS XI), August 07-11, 1995, Univ. Nottingham, Nottingham, England
Volume/pages
362(1996) :1-3 , p. 247-250
ISSN
0039-6028
ISI
A1996UZ03300061
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
We have studied tunnelling through Si donors incorporated in the quantum well of double barrier resonant tunnelling devices. In addition to a resonance associated with the ground state of a single donor (1s level), a novel donor-related resonance at a smaller binding energy is observed in high magnetic fields where it becomes dominant over the Is resonance. We attribute this novel feature to a D-minus state of a shallow donor.
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Handle