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Title
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Resonant tunnelling through **D**- states
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Author
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Abstract
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| We have studied tunnelling through Si donors incorporated in the quantum well of double barrier resonant tunnelling devices. In addition to a resonance associated with the ground state of a single donor (1s level), a novel donor-related resonance at a smaller binding energy is observed in high magnetic fields where it becomes dominant over the Is resonance. We attribute this novel feature to a D-minus state of a shallow donor. |
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Language
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English
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Source (journal)
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Surface science : a journal devoted to the physics and chemistry of interfaces. - Amsterdam, 1964, currens
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Source (book)
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11th International Conference on the Electronic Properties of 2-Dimensional Systems (EP2DS XI), August 07-11, 1995, Univ. Nottingham, Nottingham, England
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Publication
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Amsterdam
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Elsevier
,
1996
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ISSN
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0039-6028
[print]
1879-2758
[online]
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DOI
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10.1016/0039-6028(96)00395-0
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Volume/pages
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362
:1-3
(1996)
, p. 247-250
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ISI
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A1996UZ03300061
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Full text (Publisher's DOI)
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