Publication
Title
Resonant tunnelling through **D**- states
Author
Abstract
We have studied tunnelling through Si donors incorporated in the quantum well of double barrier resonant tunnelling devices. In addition to a resonance associated with the ground state of a single donor (1s level), a novel donor-related resonance at a smaller binding energy is observed in high magnetic fields where it becomes dominant over the Is resonance. We attribute this novel feature to a D-minus state of a shallow donor.
Language
English
Source (journal)
Surface science: a journal devoted to the physics and chemistry of interfaces. - Amsterdam
Source (book)
11th International Conference on the Electronic Properties of 2-Dimensional Systems (EP2DS XI), August 07-11, 1995, Univ. Nottingham, Nottingham, England
Publication
Amsterdam : Elsevier, 1996
ISSN
0039-6028
Volume/pages
362:1-3(1996), p. 247-250
ISI
A1996UZ03300061
Full text (Publishers DOI)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 01.03.2012
Last edited 06.05.2017
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