Title
Point defect reactions in silicon studied in situ by high flux electron irradiation in high voltage transmission electron microscope Point defect reactions in silicon studied in situ by high flux electron irradiation in high voltage transmission electron microscope
Author
Faculty/Department
Faculty of Sciences. Physics
Publication type
article
Publication
London :Inst Materials ,
Subject
Physics
Engineering sciences. Technology
Source (journal)
Materials science and technology. - London
Volume/pages
11(1995) :11 , p. 1194-1202
ISSN
0267-0836
ISI
A1995TQ95100016
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
Results are presented of in situ studies of 1 MeV electron irradiation induced (113) defect generation in silicon containing different types and concentrations of extrinsic point defects. A semiquantitative model is developed describing the influence of interfaces and stress fields and of extrinsic point defects on the (113) defect generation in silicon during irradiation. The theoretical results obtained are correlated with experimental data obtained on silicon uniformly doped with boron and phosphorus and with observations obtained by irradiating cross-sectional samples of wafers with highly doped surface layers. It is shown that in situ irradiation in a high voltage election microscope is a powerful tool for studying local point defect reactions in silicon. (C) 1995 The Institute of Materials.
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