Publication
Title
Point defect reactions in silicon studied in situ by high flux electron irradiation in high voltage transmission electron microscope
Author
Abstract
Results are presented of in situ studies of 1 MeV electron irradiation induced (113) defect generation in silicon containing different types and concentrations of extrinsic point defects. A semiquantitative model is developed describing the influence of interfaces and stress fields and of extrinsic point defects on the (113) defect generation in silicon during irradiation. The theoretical results obtained are correlated with experimental data obtained on silicon uniformly doped with boron and phosphorus and with observations obtained by irradiating cross-sectional samples of wafers with highly doped surface layers. It is shown that in situ irradiation in a high voltage election microscope is a powerful tool for studying local point defect reactions in silicon. (C) 1995 The Institute of Materials.
Language
English
Source (journal)
Materials science and technology. - London
Publication
London : Inst Materials, 1995
ISSN
0267-0836
Volume/pages
11:11(1995), p. 1194-1202
ISI
A1995TQ95100016
Full text (Publisher's DOI)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 01.03.2012
Last edited 20.08.2017
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