Publication
Title
Point defect reactions in silicon studied in situ by high flux electron irradiation in high voltage transmission electron microscope
Author
Abstract
Language
English
Source (journal)
Materials science and technology. - London
Publication
London : Inst Materials, 1995
ISSN
0267-0836
Volume/pages
11:11(1995), p. 1194-1202
ISI
A1995TQ95100016
Full text (Publisher's DOI)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 01.03.2012
Last edited 17.05.2018
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