Publication
Title
Cyclotron-resonance of 2d electrons at $Si-\delta-doped$ InSb layers grown on GaAs
Author
Abstract
 Cyclotron resonance (CR) of the electrons accumulated at sheets with heavy Si doping in InSb were observed using far infrared radiation. The angular dependence of the CR follows closely the 1/cos theta behaviour with some small deviations at high angles attributed to coupling between subbands. From the effective mass of the lowest subband, which is found to be 0.027m(o), the bottom of the lowest subband was determined to lie 125 meV below the Fermi level.
Language
English
Source (journal)
Physica: B: condensed matter. - Amsterdam
Publication
Amsterdam : Elsevier, 1995
ISSN
0921-4526
Volume/pages
211:1-4(1995), p. 466-469
ISI
A1995RD54400121
Full text (Publishers DOI)
Full text (publishers version - intranet only)
UAntwerpen
 Faculty/Department Research group Publication type Subject Affiliation Publications with a UAntwerp address