Title
Cyclotron-resonance of 2d electrons at <tex>$Si-\delta-doped$</tex> InSb layers grown on GaAs Cyclotron-resonance of 2d electrons at <tex>$Si-\delta-doped$</tex> InSb layers grown on GaAs
Author
Faculty/Department
Faculty of Sciences. Physics
Publication type
article
Publication
Amsterdam :Elsevier ,
Subject
Physics
Source (journal)
Physica: B: condensed matter. - Amsterdam
Volume/pages
211(1995) :1-4 , p. 466-469
ISSN
0921-4526
ISI
A1995RD54400121
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
Cyclotron resonance (CR) of the electrons accumulated at sheets with heavy Si doping in InSb were observed using far infrared radiation. The angular dependence of the CR follows closely the 1/cos theta behaviour with some small deviations at high angles attributed to coupling between subbands. From the effective mass of the lowest subband, which is found to be 0.027m(o), the bottom of the lowest subband was determined to lie 125 meV below the Fermi level.
E-info
https://repository.uantwerpen.be/docman/iruaauth/f3318b/d26a77eabf9.pdf
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