Publication
Title
The evolution of HVEM application in antwerp
Author
Abstract
The evolution of the use of the 1250 keV high-voltage electron microscope in Antwerp is sketched by illustrating a non-exhaustive set of examples in various fields. One of the main present fields of application gets some more attention, i.e. the defect studies as produced by processing steps in microelectronic devices: (i) strain-induced dislocations at the edges of various device isolation interlayers, (ii) morphologies resulting from high-energy ion implantation creating buried layers for silicon on insulator (SOI) and other implantation technologies.
Language
English
Source (journal)
Ultramicroscopy. - Amsterdam
Source (book)
2nd Osaka International Symp.on High-Voltage Electron Microscopy : New Directions and Future Aspects of High Voltage Electron Microscopy, November 8-10, 1990, Osaka University, Osaka, Japan
Publication
Amsterdam : Elsevier, 1991
ISSN
0304-3991
Volume/pages
39:1-4(1991), p. 287-298
ISI
A1991GY23100034
Full text (Publisher's DOI)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 01.03.2012
Last edited 08.06.2017
To cite this reference