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Title
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Reaction mechanisms for atomic layer deposition of aluminum oxide on semiconductor substrates
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Author
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Abstract
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| In this work, we have studied the TMA/H(2)O (TMA Al(CH(3))(3)) atomic layer deposition (ALD) of Al(2)O(3) on hydroxyl (OH) and thiol (SH) terminated semiconductor substrates. Total reflection x-ray fluorescence reveals a complex growth-per-cycle evolution during the early ALD reaction cycles. OH and SH terminated surfaces demonstrate growth inhibition from the second reaction cycle on. Theoretical calculations, based on density functional theory, are performed on cluster models to investigate the first TMA/H(2)O reaction cycle. Based on the theoretical results, we discuss possible mechanisms for the growth inhibition from the second reaction cycle on. In addition, our calculations show that AlCH(3) groups are hydrolyzed by a H(2)O molecule adsorbed on a neighboring Al atom, independent of the type of backbonds (Si-O, Ge-O, or Ge-S) of AlCH(3). The coordination of Al remains four-fold after the first TMA/H(2)O reaction cycle. (C) 2012 American Vacuum Society. [DOI: 10.1116/1.3664090] |
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Language
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English
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Source (journal)
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Journal of vacuum science and technology: A: vacuum surfaces and films. - New York, N.Y., 1983, currens
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Publication
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New York, N.Y.
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2012
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ISSN
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0734-2101
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DOI
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10.1116/1.3664090
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Volume/pages
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30
:1
(2012)
, p. 01A127,1-01A127,10
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Article Reference
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01A127
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ISI
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000298992800027
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Medium
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E-only publicatie
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Full text (Publisher's DOI)
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