Publication
Title
Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of
Author
Abstract
The electronic properties of two-dimensional honeycomb structures of molybdenum disulfide (MoS(2)) subjected to biaxial strain have been investigated using first-principles calculations based on density functional theory. On applying compressive or tensile bi-axial strain on bi-layer and mono-layer MoS(2), the electronic properties are predicted to change from semiconducting to metallic. These changes present very interesting possibilities for engineering the electronic properties of two-dimensional structures of MoS(2).
Language
English
Source (journal)
Nano Research
Publication
2012
ISSN
1998-0124
Volume/pages
5:1(2012), p. 43-48
ISI
000299085200006
Full text (Publisher's DOI)
Full text (publisher's version - intranet only)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 05.03.2012
Last edited 11.11.2017
To cite this reference