Publication
Title
Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of $MoS_{2}$
Author
Abstract
 The electronic properties of two-dimensional honeycomb structures of molybdenum disulfide (MoS(2)) subjected to biaxial strain have been investigated using first-principles calculations based on density functional theory. On applying compressive or tensile bi-axial strain on bi-layer and mono-layer MoS(2), the electronic properties are predicted to change from semiconducting to metallic. These changes present very interesting possibilities for engineering the electronic properties of two-dimensional structures of MoS(2).
Language
English
Source (journal)
Nano Research
Publication
2012
ISSN
1998-0124
Volume/pages
5:1(2012), p. 43-48
ISI
000299085200006
Full text (Publisher's DOI)
Full text (publisher's version - intranet only)
UAntwerpen
 Faculty/Department Research group Publication type Subject Affiliation Publications with a UAntwerp address