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Title
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Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of
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Author
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Abstract
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| The electronic properties of two-dimensional honeycomb structures of molybdenum disulfide (MoS(2)) subjected to biaxial strain have been investigated using first-principles calculations based on density functional theory. On applying compressive or tensile bi-axial strain on bi-layer and mono-layer MoS(2), the electronic properties are predicted to change from semiconducting to metallic. These changes present very interesting possibilities for engineering the electronic properties of two-dimensional structures of MoS(2). |
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Language
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English
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Source (journal)
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Nano Research
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Publication
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2012
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ISSN
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1998-0124
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DOI
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10.1007/S12274-011-0183-0
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Volume/pages
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5
:1
(2012)
, p. 43-48
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ISI
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000299085200006
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Full text (Publisher's DOI)
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Full text (publisher's version - intranet only)
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