Title
Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of <tex>$MoS_{2}$</tex> Strain-induced semiconductor to metal transition in the two-dimensional honeycomb structure of <tex>$MoS_{2}$</tex>
Author
Faculty/Department
Faculty of Sciences. Chemistry
Publication type
article
Publication
Subject
Physics
Chemistry
Source (journal)
Nano Research
Volume/pages
5(2012) :1 , p. 43-48
ISSN
1998-0124
ISI
000299085200006
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
The electronic properties of two-dimensional honeycomb structures of molybdenum disulfide (MoS(2)) subjected to biaxial strain have been investigated using first-principles calculations based on density functional theory. On applying compressive or tensile bi-axial strain on bi-layer and mono-layer MoS(2), the electronic properties are predicted to change from semiconducting to metallic. These changes present very interesting possibilities for engineering the electronic properties of two-dimensional structures of MoS(2).
E-info
https://repository.uantwerpen.be/docman/iruaauth/66d44b/29f1274.pdf
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