| Title |
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Hole subbands in freestanding nanowires : six-band versus eight-band k.p modelling
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| Abstract |
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| The electronic structure of GaAs, InAs and InSb nanowires is studied using the six-band and the eight-band k.p models. The effect of the different Luttinger-like parameters (in the eight-band model) on the hole band structure is investigated. Although GaAs nanostructures are often treated within a six-band model because of the large bandgap, it is shown that an eight-band model is necessary for a correct description of its hole spectrum. The camel-back structure usually found in the six-band model is not always present in the eight-band model. This camel-back structure depends on the interaction between light and heavy holes, especially the ones with opposite spin. The latter effect is less pronounced in an eight-band model, but could be very sensitive to the Kane inter-band energy (E-P) value. |
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| Language |
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English
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| Source (journal) |
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Journal of physics : condensed matter. - London |
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| Publication |
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London : 2012
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| ISSN |
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0953-8984
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| Volume/pages |
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24:13(2012), p. 135302,1-135302,10
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| Article Reference |
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135302
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| ISI |
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000302120100007
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E-only publicatie
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| Full text (Publisher's DOI) |
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| Full text (publisher's version - intranet only) |
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