Title
|
|
|
|
Hole subbands in freestanding nanowires : six-band versus eight-band k.p modelling
|
|
Author
|
|
|
|
|
|
Abstract
|
|
|
|
The electronic structure of GaAs, InAs and InSb nanowires is studied using the six-band and the eight-band k.p models. The effect of the different Luttinger-like parameters (in the eight-band model) on the hole band structure is investigated. Although GaAs nanostructures are often treated within a six-band model because of the large bandgap, it is shown that an eight-band model is necessary for a correct description of its hole spectrum. The camel-back structure usually found in the six-band model is not always present in the eight-band model. This camel-back structure depends on the interaction between light and heavy holes, especially the ones with opposite spin. The latter effect is less pronounced in an eight-band model, but could be very sensitive to the Kane inter-band energy (E-P) value. |
|
|
Language
|
|
|
|
English
|
|
Source (journal)
|
|
|
|
Journal of physics : condensed matter. - London
|
|
Publication
|
|
|
|
London
:
2012
|
|
ISSN
|
|
|
|
0953-8984
|
|
DOI
|
|
|
|
10.1088/0953-8984/24/13/135302
|
|
Volume/pages
|
|
|
|
24
:13
(2012)
, p. 135302,1-135302,10
|
|
Article Reference
|
|
|
|
135302
|
|
ISI
|
|
|
|
000302120100007
|
|
Medium
|
|
|
|
E-only publicatie
|
|
Full text (Publisher's DOI)
|
|
|
|
|
|
Full text (publisher's version - intranet only)
|
|
|
|
|
|