| Title |
|
|
|
Hole subbands in freestanding nanowires : six-band versus eight-band k.p modelling
|
|
| Author |
|
|
|
|
|
| Abstract |
|
|
|
| The electronic structure of GaAs, InAs and InSb nanowires is studied using the six-band and the eight-band k.p models. The effect of the different Luttinger-like parameters (in the eight-band model) on the hole band structure is investigated. Although GaAs nanostructures are often treated within a six-band model because of the large bandgap, it is shown that an eight-band model is necessary for a correct description of its hole spectrum. The camel-back structure usually found in the six-band model is not always present in the eight-band model. This camel-back structure depends on the interaction between light and heavy holes, especially the ones with opposite spin. The latter effect is less pronounced in an eight-band model, but could be very sensitive to the Kane inter-band energy (E-P) value. | |
|
| Language |
|
|
|
English
|
|
| Source (journal) |
|
|
|
Journal of physics : condensed matter. - London |
|
| Publication |
|
|
|
London : 2012
|
|
| ISSN |
|
|
|
0953-8984
|
|
| Volume/pages |
|
|
|
24:13(2012), p. 135302,1-135302,10
|
|
| Article Reference |
|
|
|
135302
|
|
| ISI |
|
|
|
000302120100007
|
|
| Medium |
|
|
|
E-only publicatie
|
|
| Full text (Publisher's DOI) |
|
|
| |
|
| Full text (publisher's version - intranet only) |
|
|
| |
|