| Title |
|
|
|
First-principles simulation of oxygen diffusion in : role in the resistive switching mechanism
| |
| Author |
|
|
|
| |
| Abstract |
|
|
|
| Transition metal oxide-based resistor random access memory (RRAM) takes advantage of oxygen-related defects in its principle of operation. Since the change in resistivity of the material is controlled by the oxygen deficiency level, it is of major importance to quantify the kinetics of the oxygen diffusion, key factor for oxide stoichiometry. Ab initio accelerated molecular dynamics techniques are employed to investigate the oxygen diffusivity in amorphous hafnia (HfOx, x = 1.97, 1.0, 0.5). The computed kinetics is in agreement with experimental measurements. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3697690] | | |
| Language |
|
|
|
English
| |
| Source (journal) |
|
|
|
Applied physics letters / American Institute of Physics. - New York, N.Y., 1962, currens | |
| Publication |
|
|
|
New York, N.Y. : American Institute of Physics, 2012
| |
| ISSN |
|
|
|
0003-6951 [print]
1077-3118 [online]
| |
| Volume/pages |
|
|
|
100:13(2012), p. 133102,1-133102,4
| |
| Article Reference |
|
|
|
133102
| |
| ISI |
|
|
|
000302230800060
| |
| Medium |
|
|
|
E-only publicatie
| |
| Full text (Publisher's DOI) |
|
|
| | |
|