Title
Properties and thermal stability of solution processed ultrathin, high-**k** bismuth titanate (<tex>$Bi_{2}Ti_{2}O_{7}$</tex>) films Properties and thermal stability of solution processed ultrathin, high-**k** bismuth titanate (<tex>$Bi_{2}Ti_{2}O_{7}$</tex>) films
Author
Faculty/Department
Faculty of Sciences. Chemistry
Faculty of Sciences. Physics
Publication type
article
Publication
New York, N.Y. ,
Subject
Physics
Source (journal)
Materials research bulletin. - New York, N.Y.
Volume/pages
47(2012) :3 , p. 511-517
ISSN
0025-5408
ISI
000301994100001
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
Ultrathin bismuth titanate films (Bi2Ti2O7, 5-25 nm) are deposited onto SiO2/Si substrates by aqueous chemical solution deposition and their evolution during annealing is studied. The films crystallize into a preferentially oriented, pure pyrochlore phase between 500 and 700 degrees C, depending on the film thickness and the total thermal budget. Crystallization causes a strong increase of surface roughness compared to amorphous films. An increase of the interfacial layer thickness is observed after anneal at 600 degrees C, together with intermixing of bismuth with the substrate as shown by TEM-EDX. The band gap was determined to be similar to 3 eV from photoconductivity measurements and high dielectric constants between 30 and 130 were determined from capacitance voltage measurements, depending on the processing conditions. (C) 2012 Elsevier Ltd. All rights reserved.
E-info
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