Publication
Title
Modeling the impact of junction angles in tunnel field-effect transistors
Author
Abstract
Language
English
Source (journal)
Solid state electronics. - Oxford
Publication
Oxford : 2012
ISSN
0038-1101
Volume/pages
69(2012), p. 31-37
ISI
000301561600009
Full text (Publisher's DOI)
Full text (publisher's version - intranet only)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 14.05.2012
Last edited 06.07.2018
To cite this reference