| Title |
|
|
|
Quantum simulations of electrostatics in Si cylindrical junctionless nanowire nFETs and pFETs with a homogeneous channel including strain and arbitrary crystallographic orientations
|
|
| Author |
|
|
|
|
|
| Abstract |
|
|
|
| Simulation results of electrostatics in Si cylindrical junctionless nanowire transistors with a homogenous channel are presented. Junctionless transistors including strain and arbitrary crystallographic orientations are studied. Size quantization effects are simulated by self-consistent solutions of the Poisson and Schrodinger equations. The 6 x 6 k.p method is employed for the calculation of the valence subband structure in a junctionless nanowire pFET. The influence of stress/strain and crystallographic channel orientation on to the electrostatics in terms of subband structure, charge density, and C-V curve is systematically studied. (C) 2011 Elsevier Ltd. All rights reserved. | |
|
| Language |
|
|
|
English
|
|
| Source (journal) |
|
|
|
Solid state electronics. - Oxford |
|
| Publication |
|
|
|
Oxford : 2012
|
|
| ISSN |
|
|
|
0038-1101
|
|
| Volume/pages |
|
|
|
71(2012), p. 30-36
|
|
| ISI |
|
|
|
000303033800007
|
|
| Full text (Publisher's DOI) |
|
|
| |
|
| Full text (publisher's version - intranet only) |
|
|
| |
|