Title
Quantum simulations of electrostatics in Si cylindrical junctionless nanowire nFETs and pFETs with a homogeneous channel including strain and arbitrary crystallographic orientationsQuantum simulations of electrostatics in Si cylindrical junctionless nanowire nFETs and pFETs with a homogeneous channel including strain and arbitrary crystallographic orientations
Author
Faculty/Department
Faculty of Sciences. Chemistry
Faculty of Sciences. Physics
Research group
Condensed Matter Theory
Plasma, laser ablation and surface modeling - Antwerp (PLASMANT)
Publication type
article
Publication
Oxford,
Subject
Physics
Source (journal)
Solid state electronics. - Oxford
Volume/pages
71(2012), p. 30-36
ISSN
0038-1101
ISI
000303033800007
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
Simulation results of electrostatics in Si cylindrical junctionless nanowire transistors with a homogenous channel are presented. Junctionless transistors including strain and arbitrary crystallographic orientations are studied. Size quantization effects are simulated by self-consistent solutions of the Poisson and Schrodinger equations. The 6 x 6 k.p method is employed for the calculation of the valence subband structure in a junctionless nanowire pFET. The influence of stress/strain and crystallographic channel orientation on to the electrostatics in terms of subband structure, charge density, and C-V curve is systematically studied. (C) 2011 Elsevier Ltd. All rights reserved.
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