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Title
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Quantum simulations of electrostatics in Si cylindrical junctionless nanowire nFETs and pFETs with a homogeneous channel including strain and arbitrary crystallographic orientations
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Author
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Abstract
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| Simulation results of electrostatics in Si cylindrical junctionless nanowire transistors with a homogenous channel are presented. Junctionless transistors including strain and arbitrary crystallographic orientations are studied. Size quantization effects are simulated by self-consistent solutions of the Poisson and Schrodinger equations. The 6 x 6 k.p method is employed for the calculation of the valence subband structure in a junctionless nanowire pFET. The influence of stress/strain and crystallographic channel orientation on to the electrostatics in terms of subband structure, charge density, and C-V curve is systematically studied. (C) 2011 Elsevier Ltd. All rights reserved. |
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Language
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English
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Source (journal)
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Solid state electronics. - Oxford
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Publication
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Oxford
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2012
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ISSN
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0038-1101
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Volume/pages
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71
(2012)
, p. 30-36
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ISI
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000303033800007
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Full text (Publisher's DOI)
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Full text (publisher's version - intranet only)
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