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Insights into Ni-filament formation in unipolar-switching resistive random access memory device
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| Abstract |
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| In this letter, CMOS-compatible Ni/HfO2/TiN resistive random access memory stacks demonstrated attractive unipolar switching properties, showing >10(3) endurance and long retention at 150 degrees C. The Ni bottom electrode (BE) improved the switching yield over the NiSiPt BE. To better understand the unipolar forming mechanism, ab initio simulation and time of flight-secondary ion mass spectroscopy were utilized. Compared to the NiSiPt BE, Ni BE gives larger Ni diffusion in the HfO2 and lower formation enthalpy of Ni2+ species during electrical forming. Both the electrical and physical results supported a Ni-injection mechanism for the filament formation. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3695078] | | |
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English
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Applied physics letters / American Institute of Physics. - New York, N.Y., 1962, currens | |
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New York, N.Y. : American Institute of Physics, 2012
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0003-6951 [print]
1077-3118 [online]
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100:11(2012), p. 113513,1-113513,4
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113513
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000302204900091
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E-only publicatie
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