|
Title
|
|
|
|
A model determining optimal doping concentration and material's band gap of tunnel field-effect transistors
| |
|
Author
|
|
|
|
| |
|
Abstract
|
|
|
|
| We develop a model for the tunnel field-effect transistor (TFET) based on the Wentzel-Kramer-Brillouin approximation which improves over existing semi-classical models employing generation rates. We hereby introduce the concept of a characteristic tunneling length in direct semiconductors. Based on the model, we show that a limited density of states results in an optimal doping concentration as well as an optimal material's band gap to obtain the highest TFET on-current at a given supply voltage. The observed optimal-doping trend is confirmed by 2-dimensional quantum-mechanical simulations for silicon and germanium. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4714544] |
| |
|
Language
|
|
|
|
English
| |
|
Source (journal)
|
|
|
|
Applied physics letters / American Institute of Physics. - New York, N.Y., 1962, currens
| |
|
Publication
|
|
|
|
New York, N.Y.
:
American Institute of Physics
,
2012
| |
|
ISSN
|
|
|
|
0003-6951
[print]
1077-3118
[online]
| |
|
DOI
|
|
|
|
10.1063/1.4714544
| |
|
Volume/pages
|
|
|
|
100
:19
(2012)
, p. 193509,1-193509,4
| |
|
Article Reference
|
|
|
|
193509
| |
|
ISI
|
|
|
|
000304108000098
| |
|
Medium
|
|
|
|
E-only publicatie
| |
|
Full text (Publisher's DOI)
|
|
|
|
| |
|