Publication
Title
A model determining optimal doping concentration and material's band gap of tunnel field-effect transistors
Author
Abstract
Language
English
Source (journal)
Applied physics letters / American Institute of Physics. - New York, N.Y., 1962, currens
Publication
New York, N.Y. : American Institute of Physics, 2012
ISSN
0003-6951 [print]
1077-3118 [online]
Volume/pages
100:19(2012), p. 193509,1-193509,4
Article Reference
193509
ISI
000304108000098
Medium
E-only publicatie
Full text (Publisher's DOI)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 03.07.2012
Last edited 09.11.2018
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