Publication
Title
SIMS profiling of GaAs/delta-AlAs/GaAs/ ... Heterostructures using polyatomic ionized oxygen clusters
Author
Abstract
We have studied the possibility of using polyatomic ions as the primary projectile particles for the depth profiling of solid heterostructures by means of secondary ion mass spectrometry (SIMS) in combination with ion etching. Bombardment of a target by ionized oxygen clusters of the O-n(+) (n = 3, 4) type allows the specific impact energy per primary atom to be reduced, which significantly improves the depth resolution. It is shown that a beam of primary O-n(+) (n = 3, 4) clusters with the specific impact energy as low as 1 keV per oxygen atom can be obtained using a standard ion source with a magnetic mass separator. High-resolution depth profiles of a test heterostructure of the GaAs/delta-AlAs/GaAs/... type were obtained using a magnetic sector mass spectrometer and a primary beam of O-3(+) ions with a specific energy of 1 keV per oxygen atom. The experimental data are compared with the results of computer simulation of the ion sputtering process performed using the DITRIRS code. (C) 2004 MAIK "Nauka / Interperiodica".
Language
English
Source (journal)
Technical physics letters
Publication
2004
ISSN
1063-7850
Volume/pages
30:10(2004), p. 836-838
ISI
000224591000013
Full text (Publisher's DOI)
UAntwerpen
Publication type
Subject
External links
Web of Science
Record
Identification
Creation 12.07.2012
Last edited 17.07.2017