Direct composition proriling in III-V nanostructures by cross-sectional STMDirect composition proriling in III-V nanostructures by cross-sectional STM
2003Bristol :Iop publishing ltd, 2003
CONFERENCE SERIES- INSTITUTE OF PHYSICS
3rd International Conference on Particle Physics Beyond the Standard, Model, JUN 02-07, 2002, Oulu, FINLAND
171(2003), p. 77-84
Using cross-sectional STM we have studied the local composition in III-V nanostructures such as GaAs/InGaAs quantum wells, InGaNAs/InP quantum wells and quantum dots, and InAs/GaAs self-assembled quantum dots. We are able to determine the local composition by either simply counting the constituent atoms, measuring the local lattice constant or measuring the relaxation of the cleaved surface due to the elastic field of the buried strained nanostructures.