Title
Oscillating magnetoresistance in diluted magnetic semiconductor barrier structures
Author
Publication type
article
Publication
Lancaster, Pa ,
Subject
Physics
Source (journal)
Physical review : B : condensed matter and materials physics. - Lancaster, Pa, 1998 - 2015
Volume/pages
65(2002) :11 , 5 p.
ISSN
1098-0121
1550-235X
1098-0121
Article Reference
115209
Carrier
E-only publicatie
Target language
English (eng)
Full text (Publishers DOI)
Abstract
Ballistic spin polarized transport through diluted magnetic semiconductor single and double barrier structures is investigated theoretically using a two-component model. The tunneling magnetoresistance (TMR) of the system exhibits oscillating behavior when the magnetic field is varied. An interesting beat pattern in the TMR and spin polarization is found for different nonmagnetic semiconductor/diluted magnetic semiconductor double barrier structures which arises from an interplay between the spin-up and spin-down electron channels which are split by the s-d exchange interaction.
Full text (open access)
https://repository.uantwerpen.be/docman/irua/c7e26b/7827.pdf
E-info
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000174548400065&DestLinkType=RelatedRecords&DestApp=ALL_WOS&UsrCustomerID=ef845e08c439e550330acc77c7d2d848
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000174548400065&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=ef845e08c439e550330acc77c7d2d848
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000174548400065&DestLinkType=CitingArticles&DestApp=ALL_WOS&UsrCustomerID=ef845e08c439e550330acc77c7d2d848