Publication
Title
Oscillating magnetoresistance in diluted magnetic semiconductor barrier structures
Author
Abstract
Ballistic spin polarized transport through diluted magnetic semiconductor single and double barrier structures is investigated theoretically using a two-component model. The tunneling magnetoresistance (TMR) of the system exhibits oscillating behavior when the magnetic field is varied. An interesting beat pattern in the TMR and spin polarization is found for different nonmagnetic semiconductor/diluted magnetic semiconductor double barrier structures which arises from an interplay between the spin-up and spin-down electron channels which are split by the s-d exchange interaction.
Language
English
Source (journal)
Physical review : B : condensed matter and materials physics. - Lancaster, Pa, 1998 - 2015
Publication
Lancaster, Pa : 2002
ISSN
1098-0121 [print]
1550-235X [online]
Volume/pages
65:11(2002), 5 p.
Article Reference
115209
ISI
000174548400065
Medium
E-only publicatie
Full text (Publisher's DOI)
Full text (open access)
UAntwerpen
Publication type
Subject
External links
Web of Science
Record
Identification
Creation 12.07.2012
Last edited 09.06.2017