Publication
Title
Transmission electron microscopy study of silicon nitride amorphous films obtained by reactive pulsed laser deposition
Author
Abstract
In situ decomposition of silicon nitride films was observed by high-resolution electron microscopy. The films, which were produced by reactive pulsed laser deposition from Si wafer targets at 50-100 Pa ammonia pressure, had a prevalent content of hydrogen-doped, amorphous, non-stoichiometric silicon nitride. A layered morphology of the film, consisting of a density variation in the amorphous structure, developed under electron beam irradiation. This morphology became evident only in cross-sectional observation and was related to the stress-relaxation effect, based on a rearrangement of the bonds, We presume that the stress field anisotropy in the amorphous structure must be related to the presence of some bond texture in the as-grown, amorphous film. (C) 2001 Elsevier Science B.V. All rights reserved.
Language
English
Source (journal)
Thin solid films: an international journal on the science and technology of thin and thick films. - Lausanne
Publication
Lausanne : 2001
ISSN
0040-6090
Volume/pages
397:1-2(2001), p. 12-16
ISI
000171839300004
Full text (Publisher's DOI)
UAntwerpen
Publication type
Subject
External links
Web of Science
Record
Identification
Creation 12.07.2012
Last edited 26.11.2017