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Title
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Transmission electron microscopy study of silicon nitride amorphous films obtained by reactive pulsed laser deposition
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Author
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Abstract
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| In situ decomposition of silicon nitride films was observed by high-resolution electron microscopy. The films, which were produced by reactive pulsed laser deposition from Si wafer targets at 50-100 Pa ammonia pressure, had a prevalent content of hydrogen-doped, amorphous, non-stoichiometric silicon nitride. A layered morphology of the film, consisting of a density variation in the amorphous structure, developed under electron beam irradiation. This morphology became evident only in cross-sectional observation and was related to the stress-relaxation effect, based on a rearrangement of the bonds, We presume that the stress field anisotropy in the amorphous structure must be related to the presence of some bond texture in the as-grown, amorphous film. (C) 2001 Elsevier Science B.V. All rights reserved. |
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Language
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English
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Source (journal)
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Thin solid films : an international journal on the science and technology of thin and thick films. - Lausanne, 1967, currens
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Publication
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Lausanne
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2001
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ISSN
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0040-6090
[print]
1879-2731
[online]
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DOI
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10.1016/S0040-6090(01)01408-0
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Volume/pages
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397
:1-2
(2001)
, p. 12-16
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ISI
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000171839300004
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Full text (Publisher's DOI)
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