Title
Transmission electron microscopy study of silicon nitride amorphous films obtained by reactive pulsed laser deposition
Author
Publication type
article
Publication
Lausanne ,
Subject
Physics
Source (journal)
Thin solid films: an international journal on the science and technology of thin and thick films. - Lausanne
Volume/pages
397(2001) :1-2 , p. 12-16
ISSN
0040-6090
ISI
000171839300004
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Abstract
In situ decomposition of silicon nitride films was observed by high-resolution electron microscopy. The films, which were produced by reactive pulsed laser deposition from Si wafer targets at 50-100 Pa ammonia pressure, had a prevalent content of hydrogen-doped, amorphous, non-stoichiometric silicon nitride. A layered morphology of the film, consisting of a density variation in the amorphous structure, developed under electron beam irradiation. This morphology became evident only in cross-sectional observation and was related to the stress-relaxation effect, based on a rearrangement of the bonds, We presume that the stress field anisotropy in the amorphous structure must be related to the presence of some bond texture in the as-grown, amorphous film. (C) 2001 Elsevier Science B.V. All rights reserved.
E-info
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000171839300004&DestLinkType=RelatedRecords&DestApp=ALL_WOS&UsrCustomerID=ef845e08c439e550330acc77c7d2d848
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000171839300004&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=ef845e08c439e550330acc77c7d2d848
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000171839300004&DestLinkType=CitingArticles&DestApp=ALL_WOS&UsrCustomerID=ef845e08c439e550330acc77c7d2d848