Publication
Title
Comparison of dynamic simulations with RBS measurements of low energy ion implantation of into substrates
Author
Abstract
Antimony ions were implanted into SiO2/Si substrates at energies of 30 and 50 keV at relatively low doses (max. 5 x 10(15) ions cm(-2)). The behaviour of the implanted ions was Simulated with a dynamic TRIM code, allowing treating alteration of the target in a dynamic mode, i.e. as a function of ion dose. For cases, where the projected range of the implant coincides with the interface, it has been observed that there is significant mixing between the SiO2 layer and the Si substrate together with a constant value for the O/Si ratio except for a pronounced oxygen surface peak. Whereas in the cases, where the implant is far from the interface, the O/Si ratio shows characteristic oscillations together with the surface peak. For high doses, above about 10(16) ions cm(-2), a gradual increase of the sputtering yield Of SiO2 is observed due to Sb incorporation in the substrate. The balance between the sputtering and swelling of the target is shown to be negative up to a fluence of 9.5 x 10(15) ions cm(-2), although the total sputtering yield is more than 1. RBS (Rutherford Backscattering Spectrometry) measurements confirm the mixing at the interface in cases where the latter coincides with the projected range of the implanted ions.
Language
English
Source (journal)
Microchimica acta
Publication
2004
Volume/pages
145(2004), p. 67-74
ISI
000221453500012
Full text (Publishers DOI)
Full text (publishers version - intranet only)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 19.07.2012
Last edited 06.05.2017
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