Title Comparison of dynamic simulations with RBS measurements of low energy ion implantation of $Sb^{+}$ into $SiO_{2}/Si$ substrates Comparison of dynamic simulations with RBS measurements of low energy ion implantation of $Sb^{+}$ into $SiO_{2}/Si$ substrates Author Ignatova, Velislava A. Wätjen, Vwe Katardjiev, Illia V. Chakarov, Ivan R. Faculty/Department Faculty of Sciences. Chemistry Publication type article Publication 2004 2004 Subject Chemistry Source (journal) Microchimica acta Volume/pages 145(2004) , p. 67-74 ISSN 1436-5073 ISI 000221453500012 Carrier E Target language English (eng) Full text (Publishers DOI) Affiliation University of Antwerp Abstract Antimony ions were implanted into SiO2/Si substrates at energies of 30 and 50 keV at relatively low doses (max. 5 x 10(15) ions cm(-2)). The behaviour of the implanted ions was Simulated with a dynamic TRIM code, allowing treating alteration of the target in a dynamic mode, i.e. as a function of ion dose. For cases, where the projected range of the implant coincides with the interface, it has been observed that there is significant mixing between the SiO2 layer and the Si substrate together with a constant value for the O/Si ratio except for a pronounced oxygen surface peak. Whereas in the cases, where the implant is far from the interface, the O/Si ratio shows characteristic oscillations together with the surface peak. For high doses, above about 10(16) ions cm(-2), a gradual increase of the sputtering yield Of SiO2 is observed due to Sb incorporation in the substrate. The balance between the sputtering and swelling of the target is shown to be negative up to a fluence of 9.5 x 10(15) ions cm(-2), although the total sputtering yield is more than 1. RBS (Rutherford Backscattering Spectrometry) measurements confirm the mixing at the interface in cases where the latter coincides with the projected range of the implanted ions. E-info https://repository.uantwerpen.be/docman/iruaauth/8f26dd/8312317.pdf http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000221453500012&DestLinkType=RelatedRecords&DestApp=ALL_WOS&UsrCustomerID=ef845e08c439e550330acc77c7d2d848 http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000221453500012&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=ef845e08c439e550330acc77c7d2d848 Handle