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Title
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Impurity band and magnetic-field-induced metal-insulator transition in a doped GaAs/AlxGa1-xAs superlattice
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Author
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Abstract
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| A combination of infrared spectroscopy and magnetotransport is used to investigate the impurity band and the magnetic-field-induced metal-insulator transition in n-type GaAs/AlxGa1-xAs superlattices. The dropping of the Fermi level from the conduction band into the impurity band upon increasing magnetic field is observed in a sample doped to n=4n(c), where n(c) is the critical density according to the Mott criterion. The metal-insulator transition takes place while the Fermi level is in the impurity band, with no qualitative change from the metallic to the insulating side. Due to the anisotropy of the superlattice band structure, the metal-insulator transition is shifted to higher magnetic field, when the magnetic field is tilted away from the growth axis towards the layer planes. |
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Language
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English
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Source (journal)
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Physical review : B : condensed matter. - New York, N.Y., 1978 - 1997
Physical review : B : condensed matter and materials physics. - Lancaster, Pa, 1998 - 2015
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Publication
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New York, N.Y.
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1996
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ISSN
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0163-1829
[print]
1095-3795
[online]
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DOI
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10.1103/PHYSREVB.53.6919
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Volume/pages
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53
:11
(1996)
, p. 6919-6922
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ISI
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A1996UC74000018
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Full text (Publisher's DOI)
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Full text (open access)
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