Title Magnetotransport in a pseudomorphic $GaAs/Ga_{0.8}In_{0.2}As/Ga_{0.75}Al_{0.25}As$ heterostructure with a Si $\delta$-doping layer Magnetotransport in a pseudomorphic $GaAs/Ga_{0.8}In_{0.2}As/Ga_{0.75}Al_{0.25}As$ heterostructure with a Si $\delta$-doping layer Author Burgt, van der, M. Karavolas, V.C. Peeters, F.M. Singleton, J. Nicholas, R.J. Herlach, F. Harris, J.J. Hove, Van, M. Borghs, G. Faculty/Department Faculty of Sciences. Physics Publication type article Publication 1995 Lancaster, Pa , 1995 Subject Physics Source (journal) Physical review : B : condensed matter and materials physics. - Lancaster, Pa, 1998 - 2015 Volume/pages 52(1995) :16 , p. 12218-12231 ISSN 1098-0121 ISI A1995TB96600102 Carrier E Target language English (eng) Full text (Publishers DOI) Affiliation University of Antwerp Abstract Magnetotransport properties of a pseudomorphic GsAs/Ga0.8In0.2As/Ga0.75Al0.25As heterostructure are investigated in pulsed magnetic fields up to 50 T and at temperatures of T = 1.4 and 4.2 K. The structure studied consists of a Si delta layer parallel to a Ga0.8In0.2As quantum well (QW). The dark electron density of the structure is n(c) = 1.67 x 10(16) m(-2). By illumination the density can be increased up to a factor of 4; this way the second subband in the Ga0.08In0.2As QW can become populated as well as the Si delta layer. The presence of electrons in the delta layer results in drastic changes in the transport data, especially at magnetic fields beyond 30 T. The phenomena observed are interpreted as (i) magnetic freeze-out of carriers in the delta layer when a low density of electrons is present in the delta layer, and (ii) quantization of the electron motion in the two-dimensional electron gases in both the Ga0.8In0.2As QW and the Si delta layer in the case of high densities. These conclusions are corroborated by the numerical results of our theoretical model. We obtain satisfactory agreement between model and experiment. Full text (open access) https://repository.uantwerpen.be/docman/irua/109210/2399.pdf E-info http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:A1995TB96600102&DestLinkType=RelatedRecords&DestApp=ALL_WOS&UsrCustomerID=ef845e08c439e550330acc77c7d2d848 http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:A1995TB96600102&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=ef845e08c439e550330acc77c7d2d848 http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:A1995TB96600102&DestLinkType=CitingArticles&DestApp=ALL_WOS&UsrCustomerID=ef845e08c439e550330acc77c7d2d848 Handle