Publication
Title
Dielectric mismatch effect on coupled shallow impurity states in a semiconductor nanowire
Author
Abstract
Coupled shallow impurity states in a freestanding semiconductor nanowire and in a semiconductor nanowire surrounded by a metallic gate are studied within the effective-mass approximation. Bonding and antibonding states are found due to the coupling of the two impurities, and their energy converges with increasing distance di between the two impurities. The dependences of the binding energy on the wire radius R, the distance di between the two impurities, and the impurity radial position in the nanowire are examined.
Language
English
Source (journal)
Physical review : B : solid state. - Lancaster, Pa, 1970 - 1978
Publication
Lancaster, Pa : 2009
ISSN
0556-2805
Volume/pages
79:8(2009), p. 085306,1-085306,7
ISI
000263816000051
Full text (Publisher's DOI)
Full text (open access)
UAntwerpen
Faculty/Department
Research group
[E?say:metaLocaldata.cgzprojectinf]
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 12.05.2009
Last edited 04.08.2017
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