|
Title
|
|
|
|
Landau levels in graphene bilayer quantum dots
|
|
|
Author
|
|
|
|
|
|
|
Abstract
|
|
|
|
| We investigate localized electron and hole states in parabolic quantum dots of biased graphene bilayers in the presence of a perpendicular magnetic field. These quantum dots can be created by means of nanostructured gates or by position-dependent doping, which can create a gap in the otherwise gapless dispersion of a graphene bilayer. Numerical results show the energy levels of confined electrons and holes as a function of the dot parameters and the magnetic field. Remarkable crossings of energy levels are found. |
|
|
|
Language
|
|
|
|
English
|
|
|
Source (journal)
|
|
|
|
Physical review : B : solid state. - Lancaster, Pa, 1970 - 1978
|
|
|
Publication
|
|
|
|
Lancaster, Pa
:
2009
|
|
|
ISSN
|
|
|
|
0556-2805
|
|
|
DOI
|
|
|
|
10.1103/PHYSREVB.79.195403
|
|
|
Volume/pages
|
|
|
|
79
:19
(2009)
, p. 195403,1-195403,5
|
|
|
ISI
|
|
|
|
000266501300102
|
|
|
Full text (Publisher's DOI)
|
|
|
|
|
|
|
Full text (open access)
|
|
|
|
|
|